• <=Back to Equipment Page
  

Flexus 2320-S

Description¶

Tool Specifications¶

• Substrate size: 3” – 8” round
• Operating Temp: room – 500C
• Substrate surface must be able to reflect a laser beam
• 3-d mapping options
• Automated stress calculation
• Laser: 4-mW GaAlAs laser with wavelength 670nm and 4-mW GaAlAs laser with wavelength 785nm
  

Applications¶

Tool Documents¶

• System Overview https://docs.google.com/document/pub?id=15rePmBcD1349FihiCL9XKlx8vQSzjgr-bgfhLbiCt6k
• Operating Procedure https://docs.google.com/document/pub?id=1H54FtHKXPB318jwdyzLrHd7PulN4yhJYxQm19-FHEYA
  

Solvent 14

Description¶

Tool Capabilities/Limitations¶

• Wear personal protective equipment. Required PPE at this bench are Trionic gloves.
• Do not bring any Acids or bases into this bench because solvents and acids/bases can react and cause an explosion.
• Know the properties and hazards of chemicals you are working with. If you don’t know, find out by reading about them or asking staff.
• Plan the details of your process. Before you start working, plan what quantities of chemicals and sample carriers you will use. Plan how you will rinse your sample and what you will do with any waste generated. Make sure you know how the controllers work.
• Always label beakers appropriately, and do not leave beakers beyond your reserved time.
  

Wafer Requirements¶

Supported Recipes/Processes¶

• PRS 2000 for positive resist stripping
• PRS 2000 for Crystal Bond removal
  

• Ultrasonic liftoff
• Hot water for Crystal Bond removal
• Solvent-based wafer cleaning
  

Tool Maintenance¶

Tool Location¶

Zygo NewView 5000

Tool Documents¶

• System Overview https://docs.google.com/document/pub?id=1SkDXvUZVjgw_Jl4P_xLbUeaVf097PggJ2I_rskHWImY
• Operating Procedure https://docs.google.com/document/pub?id=1l2V1irp9AxRyzJux2VIC-QtIUuLInq7-ktNXv8eq3SI
  

Announcements¶

Xactix XeF2

System Overview¶

Tool Capabilities/Limitations¶

• Materials Processed
• Material restrictions
  

• Harware Details
  • Power specs
  • Chemicals
  • Gases
    

• Capabilities
  • Resolution
  • Aspect Ratio
  • Thickness range
    

Substrate Requirements¶

• Sample size range
  • Diameter
  • Thickness
    

Supported Processes¶

• list supported processes/recipes (make links if applicable)
• if applicable list other applicable processes, and/or describe how to write/edit custom recipes
• describe example processes related to the tool (make links)
  

Operation¶

1. Describe basic operating procedure
   1. Like the "cheat sheet" in the front of the log book
      

Tool Checkout Procedure¶

Tool Maintenance/Qualification¶

Tool Location¶

Description¶

Lithography Policies in the LNF¶

New Lithography Tool Training Procedure¶

Changes to Manual Photoresist Spinners¶

• The CEE 100CB spinner has been moved to 1440C and interlocked. For authorization, please read the wiki page for the tool.
• The Headway Spinners are offline and have been removed.
• New CEE 200X 1 and CEE 200X 2 spinners will be installed and will be released in summer 2013.
• The Solitec Spinner is planned to be taken offline, likely in summer 2013.
  

Lab Supplied Photoresists¶

Photoresist Development Policies¶

HMDS Priming¶

• Date Created: 10/2011
• Date Modified: 1/2013
• Authored by: Rob Hower and Nadine Wang
  

Description¶

Material Requirements¶

Equipment needed for process¶

• Solvent 14 Bench
  

Chemicals needed for process¶

• Tetraethylene Glycol: CAS # 112-60-7
• Thiophene, Tetrahydro-, 1,1-dioxide: CAS # 126-33-0
• Diethylene Glycol Monoethylether: CAS # 111-90-0
• 2-Propanol, 1-amino: CAS # 78-96-6
• 1-Methyl-2-pyrrolidinone: CAS # 872-50-4
  

Protective equipment needed¶

Procedure¶

1. Log into logbook at the end of this manual.
2. Turn on the bench using the button on the bottom left of the control panel above the bench.
3. Remove the standard PRS 2000 take from the hotplate. Be careful, because it may be hot.
   1. Place it off to the side.
4. Fill the beaker labeled Solvent 14 Crystal Bond on the rack with DI water from the DI gun.
5. Place this beaker onto the left hotplate. Insert the temperature and level sensors into the beaker.
6. Turn on the Hot-plate.
   1. Make sure the dial on the hotplate itself is set to 100C. If it is too low, the hotplate will not fully heat up to the digitally set temperature.
   2. Press the low level reset button. The light will turn off. If it doesn’t, make sure you have enough liquid in the beaker and that the sensors are in the beaker.
7. Allow the bath temperature to rise to >60C. This will take approximately 15 min.
8. Put on PPE. Required PPE is Trionic gloves.
9. Place wafers into the horizontal process carrier face down.
10. Put the horizontal carrier with the wafers into the Hot water.
11. The separation process can take between 10 to 60 minutes.
12. Start timer.
13. Separate the wafers by sliding them apart laterally.
14. Once they are separated, put them back into the hot water for 5-10 minutes.
15. If you are having difficulty removing the crystal bond (usually because of long RIE)
    1. Do steps 6-14 using the PRS Crystal bond on the Right hotplate.
    2. When finished in the PRS, place into the hot water again.
16. Rinse in QDR for 4 cycles. Dry wafers using spin rinser dryer or N2 gun.
17. Pour the hot water down the drain in the sink, or aspirate using the water aspirator.
18. If you are finished, wipe the surfaces and turn off the bench.
    

Hazards¶

• Inhalation: Causes irritation to the respiratory tract. Higher exposure may affect the blood and central nervous system
  

• Ingestion: Causes irritation to the gastrointestinal tract. Symptoms may include nausea, vomiting and diarrhea.
  

• Chronic Exposure: Repeated or prolonged aerosol exposures in test animals produced blood changes, lung damage, tremors and convulsions.
  

Disposal¶

Description¶

Processes¶

• T. Briggs & N. Wang
• Description: This RCA cleaning procedure is required on all wafers prior to any furnace process.
  

• K. Appel & P. Sunal
• http://www.lnf.umich.edu/MNF/Current/Equipment/SOPs/Cleaning/RCA_HF_PFC.pdf
  

• R. Hower
• Description: Nanostrip solution is a stabilized form of piranha. It is capable of removing 4um of resist from 250 4” wafers, and is effective at cleaning off other contaminants and organic residues.
  

• R. Hower
• Description: The RCA SC-II clean removes metal and ionic contaminants from the wafer surface.
  

• R. Hower
• Description: The RCA SC-I clean removes organic contaminants (such as dust particles, grease, or other organic residues) from the wafer surface.
  

• R. Hower
• Description: The Megasonic tank uses an ultrasonic frequency to generate a controlled agitation of a chemical cleaning liquid to clean semiconductor wafers of particulate contamination
  

• R. Hower
• Description: Metal liftoff patterning for 4" and 6" Si or glass wafers.
  

• R. Hower
• Description: PRS 2000 is an NMP-based positive resist stripper used for removing photoresist.
  

• R. Hower
• Description: Crystal Bond is a material commonly used to mount a sample wafer to a carrier wafer prior to DRIE. This describes the procedure for removing Crystal Bond.
  

• Date Created: 10/2011
• Date Modified: 1/2013
• Authored by: Rob Hower and Nadine Wang
  

Description¶

1. The metal must be much thinner than the thickness of the resist. For standard resist, > 5:1 is required.
2. For fine lines, LOR (lift off resist) is a good material for line definition. Contact a staff member for more information.
3. The metal must have good adhesion to the substrate.
4. Heating of the resist in solvent causes the resist to swell and break any connection to the patterns.
5. Ultrasonic will break up the metal and remove any connections between the metal on the resist and the patterns remaining.
   

Liftoff in the 1480 B Solvent Bench 14¶

Material Requirements¶

Equipment needed for process¶

• Solvent 14 Bench
  

Chemicals needed for process¶

• Acetone: CAS # 67-64-1
• Isopropyl Alcohol (IPA): CAS # 67-63-0
• Nano Remover PG:
• N-Methyl Pyrrolidinone: CAS # 872-50-4 > 99%
• Proprietary Surfactant <1%
  

• Diethylene glycol n-butyl ether: CAS # 112-34-5
• Dipropylene glycol monomethyl ether: CAS # 34590-94-8
• Ethylene glycol n-butyl ether: CAS # 111-76-2
• Furfuryl alcohol: CAS # 98-00-0
• Polyether monoethanolamine: CAS # 141-43-5
  

Protective equipment needed¶

Procedure¶

1. Log into logbook at end of this manual.
2. Turn on the Bench using the on button in the lower left of the control panel above the bench.
3. Turn on the Tank(s) you are going to use.
   1. Press the PWR button on.
   2. If the LL alarm is flashing red, add some water to the tank until the alarm goes off
   3. The tank should be in Hold. Press the Hold button to take it out of hold it will begin heating
   4. Wait approximately 10 minutes for the water to heat up to approximately 60˚C
4. Put on PPE.
   1. Required PPE is Trionic gloves.
5. Using the Red labeled solvent-14 beaker with the Orange side labels, pour solvent (Acetone, 1112A or Remover PG) into the beaker to the depth required to completely cover the samples when using the horizontal carrier.
6. Put wafers facing down into the horizontal carrier. This will reduce the particles reattaching to the front of the substrate.
7. Place the beaker into the liftoff tank and allow the temperature to stabilize.
8. Add carrier with wafers to the tank.
9. Allow the hot solvents to react with the photoresist. This typically takes approximately
   15 – 30 min. It will vary depending on the thickness of the resist, the profile of the resist, and the thickness of the metal. Longer or shorter can be used depending on the process required.
10. Optional: Turn on the ultrasonic.
    1. Set the power for the ultrasonic on the control above the bench.
       1. Setting of 7 works very well.
       2. More fragile structures can use lower power
    2. Press start on the ultrasonic timer next to the temperature controller.
    3. The timer is set for 2 minutes. This has worked well for many processes.
    4. If you want a shorter duration press stop/reset. Press again to reset the timer
11. Repeat 9 through 11 if necessary.
12. Note, if the wafer(s) are removed from the solvent, rinsed and dried before liftoff is complete, it may be difficult to remove the metal at a later time.
13. For Acetone liftoff, Rinse the wafers with IPA. A squirt bottle works fine for a single wafer, a beaker of IPA will work better for multiple wafers. Use the Solvent liftoff beaker.
14. Mate the horizontal carrier with a standard cassette
15. Place the cassette into the QDR tank for 4 cycles.
16. Dry wafers using spin rinser/dryer or N2 gun.
17. Pour the liftoff waste into the solvent trap located next to the nitrogen and DI water guns. This goes into the solvent waste tank so DO NOT POUR ACIDS OR BASES INTO THIS. Rinse out the beaker with DI water 3 times using the gun and pour into the sink.
18. Clean the IPA beaker by pouring the solvent waste into the trap, or aspirating using the Air Aspirator. Rinse out the beaker with DI water 3 times and pour into the sink.
19. Cover tank and let cool by putting the tank back into Hold. If you are finished, wipe down the bench and turn it off.
    

Hazards of Ultrasonic Liftoff¶

Storage¶

Disposal¶

Description¶

Announcements for May 2013¶

• LOR 10B is now available in the LNF Store in syringes. It is no longer available in amber bottles.
• LNF Wiki Announcements Page
• User communications meeting May 31
• Lab improvement committee meeting
• Mask 13 wet bench update
• Solvent 84 online
• Chemical Purge
• Looking for undergrads for summer Jobs
• Base-61 (1440C) will be available for checkout in mid-May. Base-72 (1440B) will go offline at the beginning of June. See Lithography Policy Changes for more details.
  

Announcements for April 2013¶

• Staff are now offering a Lithography Training Session for checkout on the CEE 100 Spinner, CEE Developers, and Image Reversal Oven.
• Acid-61 is moving to Acid-82 on April 22. See Wet Bench Reorganization for more details.
  

Announcements for March 2013¶

• Interserve Mask Maker (old) will be removed from clean room fall 2013
• Headway spinners have been removed
• CEE 100CB will be moved on March 25 and interlocked. See Lithography Policy Changes.
• Wet chemical Bench Reorganization in the old clean room
  

Announcements for February 2013¶

• Dry boxes delayed
• Anticipated Lab Layout Map of the old lab with tools where they will be.
• Click here for the slides from the User Communications Meeting from February 22. Go there for the slides from previous User Communications meetings.
  

Announcements for January 2013¶

• User Communications Meeting will be on Friday February 22 at 12:00 - 1:30pm in the White Auditorium (G906 Cooley Building). Click here for the slides
• New Heidelberg Mask Maker on-line. Training is available
• Metrology tools are going to "on-the-fly" scheduling
• All e-beam resist processing is to be done in the e-beam benches
• New mask cleaning and etching station is available for use. Create a ticket for training
• Temporary solvent processing changes Through March 1, 2013, while the new solvent bench is being installed.
• Private beaker storage is available.
• Changes have been made to the Badges/Name Tag Policies
• Labeling private stock chemicals
• PRS 2000 private stock policy has been updated
• Facilities Calendar will be used for upcoming lab closures, events, and vendors in the lab.
• All public chemicals moving to passthrough cabinets
• New lockable dry boxes in February
• New locker and gowning room policies
• Changes in new lithography bay 1440C (formerly known as the GaAs bay)
  

Description¶

Clean Room Processes¶

Standard Chemical Processes¶

• Cleaning
• Etching
• Lithography
• Miscellaneous
• Organic
• Plating
• Polishing
  

Nonstandard Chemical Processes¶

• Cleaning
• Etching
• Lithography
• Miscellaneous
• Nanofabrication
• Organic
• Plating
• Polishing
  

Restricted Approval Chemical Processes¶

• Cleaning
• Etching
• Lithography
• Miscellaneous
• Nanofabrication
• Organic
• Plating
• Polishing
  

Wet Chemistry Processes¶

• Cleaning
• Dicing
• Etching
• Lithography
• Miscellaneous
• Nanofabrication
• Organic
• Plating
• Polishing
  

Other Processes¶

• Atomic Layer Deposition (ALD)
• Auto Exposure rename this title?
• Chemical Etching
• Chemical Vapor Deposition (CVD)
• Controlled Exposure rename this title?
• Contact Exposure
• Deep Reactive Ion Etching (DRIE)
• Dicing
• Doping
• Dry Etching
• E-beam lithography
• Edge Bead Removal
• Evaporator
• Hot Plate
• Lithography
• Low Pressure Chemical Vapor Deposition (LPCVD)
• Manual Photoresist Spinning
• Mask Maker
• Metallization
• Metrology
• Physical Vapor Deposition (PVD)
• Plasma Enhanced Chemical Vapor Deposition (PECVD)
• Fabricating the Single Point Infrared Detector - is this needed?
• Sputter
• Wafer Mounting/Mating
  

Description¶

Lithography¶

• C. Y. Chao & J. Guo
• Description:
  

• F. DiPiazza
• Description: AP300 is an adhesion promoter for use with SU8 negative photoresist.
  

• Lee Harle
• Description:
  

• A. Levin
• Description: This procedure describes the use of Higgins Waterproof Black Drawing India Ink in the LNF. The ink is pre-mixed with photoresist at the time it is brought into the LNF.
  

• A. Levin
• Description: Processing Procedures for CYCLOTENE 3000 Series Dry Etch Resins (BCB).
  

• C. Florea
• Description: The mask is to be used for a liftoff procedure that will transfer the reversed pattern to an Aluminum Oxide (Alumina) layer.
  

• K. Linder
• Description: The mask is to be used for a liftoff procedure that will transfer the reversed pattern to an InP substrate.
  

• D. Sawdai
• Description: This process was designed to create a photoresist ledge using a dual-layer process for metal lift-off
  

• X. Cheng
• Description: This procedure is used to develop 950k Series PMMA photoresists.
  

• M.P. Chang
• Description: This process is used for processing the Dow Corning® photopatternable Polydimethylsiloxane (PDMS) (WL-5150, WL-5351.) for the photolithography process.
  

• J. Weigold
• Description:
  

• E-beam Negative Resist (FOx-12)
  • S. Chakravarty
  • Description: The resist will be used for e-beam lithography of GaAs based samples. Stripping of metal mask after the processes of positive resist develop and metal liftoff is difficult on GaAs based samples since most of the available metal etchants attack GaAs; hence the use of negative resist.
• Spin Curves For FOx-12
• Troubleshooting Guide for FOx-12
  

• P. Sunal
• Description:
  

• X. Qi
• Description: Polydimethylsiloxane (PDMS) is commonly known as silicone. Its typical form (Dow Corning) is not hard enough for pattern transfer. H-PDMS (Gelest, Inc.) is used for correct feature production.
  

• S. Nikles
• Description:
  

• J. Xu, W. Fung
• Description: MicroChem’s line of LOR lift-off resists are used typically to aid lift-off processes.
  

• L. Harle
• Description:
  

• B. Lucas
• Description: Spincoating, imprinting and residual removal of a polymer thin film.
  

• A. Taylor
• Description: This process is used for making the polymer electrolyte membrane for a fuel cell.
  

• K. Linder
• Description: The mask is to be used for a lift-off procedure that will transfer the reversed pattern to an InP substrate.
  

• K. Appel
• Description: Allows for easy stripping of SU-8 photoresist.
  

• C. Florea
• Description: The mask is to be used for a lift-off procedure that will transfer the reversed pattern to an Al2O3 layer.
  

• X. Cheng
• Description: A negative tone photoresist from photosensitive monomers
  

• X. Cheng
• Description:
  

• P. Sunal
• Description:
  

• R. White, R. Littrell
• Description: A procedure is described for deposition of lead zirconate titanate (PZT) using a spin-on sol-gel process.
  
  Photoresist (S1822, Microlithography Corp.)
• M. Dokmeci
• Description:
  

• J. Clark
• Description: The procedure may be used to create a planar photoresist layer over tall features.
  

• P. Sunal
• Description:
  

• T. Strong, K. Udeshi and K. Appel
• Description: SU-8 is a negative photoset epoxy resist for MEMS fabrication. The material can be applied in layers ranging from 5µm to over 1000µm and patterned in a standard UV aligner with aspect ratios approaching 18:1. In addition to being a photo resist SU-8 is suitable as a structural element in the final device.
  

• S. Lee, J. Y. Cho
• Description: Unity 2203P is a heat decomposable polymer that can potentially be used as a sacrificial layer. Unity2203P can be patterned by UV exposure and dry development, and it decomposes at dry temperature. Because of this characteristic, there is no need for wet development or removal in the process.
  

• E. Power
• Description: NR5-8000 is a negative tone photoset resist designed for DRIE processing. The material can be applied in layers ranging from 5.75m to 95m and patterned in a standard UV aligner. Resist Developer RD6 is a water-based, metal ion free resist developer for application with Negative Resists NR1, NR5, NR7 and NR9 series Resists. Resist Remover RR41 is a stripping solution designed to remove photoresist from the surface of a substrate—it is recommended for use with NR5 series resists, since the lab-supplied PRS 2000 will not work well with NR5-8000 (manufacturer claim).
  

• C. Whitney
• Description: This process is used for processing the Dow Corning® photopatternable Polydimethylsiloxane (PDMS) (WL-5150, WL-5351.) for the photolithography process.
  

Description¶

Lithography¶

• Richard Gulotty
  

• R. Hower
• Description:
  

• R. Hower
• Description: The term liftoff refers to a method of metal patterning whereby the photoresist is patterned, the metal is deposited and the photoresist is removed from under the metal “lifting off” the metal where it is deposited on top of the resist.
  

• R. Hower
• Description: PRS 2000 is POSITIVE RESIST STRIPPER. This is a stabilized solvent for the removal of photoresist from the surface of the wafer
  

• V. Ray
• Description: PMMA is a resist usually used in electron beam lithography.
  

• V. Ray
• Description: SML series resists are positive tone resists that are used in electron beam lithography. This SOP is applicable to all SML series resists in Anisole.
  

Description¶

Mask stripping/cleaning¶

1. Don apron, face shield and Trionic gloves
2. Make sure the temperature probe is in the tank
3. Turn the hotplate with the Nanostrip on and let it heat to 60C
4. Place the mask into the mask holder
5. Put into the Nanostrip for 5 minutes. There is a timer on the wet bench control panel
6. After stripping resist, place into the DI QDR for 4 cycles
7. Dry using the nitrogen gun
   

Mask etching¶

1. Don apron, face shield and Trionic gloves
2. Place the mask into the mask holder
3. Using the tank on the back right of the bench labeled “chrome etch for masks”, etch the pattern for 2 minutes. There is a timer on the wet bench control panel.
4. After etching, place mask into the DI QDR for 4 cycles
5. Dry using the nitrogen gun
6. Inspect the mask using the microscope
   

Description¶

Specifications¶

• Configured for dicing up to 200mm x 200mm products (~6 inch wafer)
• user-friendly graphical user interface
• closed-loop turntable for precise theta movement
• digital camera with bright LED illumination (vertical & oblique) with continuous digital magnification
• advanced multi-panel dicing fully-automatic vision system with automatic alignment
• 2" DC-brushless 1.2 kW front-mounted air-bearing Spindle (60 krpm Max.)
  

Materials¶

• Ceramic Substrates
• Thick-film Devices
• Glass
• Glass on Silicon (Sensors)
• PZT
• SAW Filters
• MEMS
• LED & LED on PCB Packages
• Package Singulation (BGA, QFN, LTCC)
• Opto-electronic Components
• IC Wafers.
  

Applications¶

• Can be a part of sample preparation for SEM In-line analysis.
  

Tool Documents¶

• SOP
  

GCA AS200 AutoStep

Description¶

Reticle Alignment Marks¶

Tool Documents¶

• Reticle Design Manual http://ssel-sched.eecs.umich.edu/ToolDocs/doc00004.pdf
• SOP http://ssel-sched.eecs.umich.edu/ToolDocs/doc00003.pdf
• Overview http://ssel-sched.eecs.umich.edu/ToolDocs/doc00069.pdf
  

Types¶

Stepped Exposure Tools¶

• GCA AS200 AutoStep
  

Contact Exposure Tools¶

• MA BA-6 Mask Bond Aligner
• MA6 Mask Aligner
  

• <=Back to Equipment Page
  

NanoSpec 6100

Description¶

Tool Specifications¶

• Visible light source: 200Å to ~20 μm (max thickness is film dependent)
  

Types of substrates¶

• silicon
• gallium
• arsinide
• indium phosphide
  

Measurement site¶

• 4x objective --> 62.5 µm in diameter
• 10x objective --> 25 um in diameter
• Thickness measurements are calculated using the assumed optical constants.
  

Applications¶

Tool Documents¶

• System Overview click here
• Operating Procedure click here
• XMP Software Setup Procedure click here
  

Dektak 6 M Surface Profilometer

System Overview¶

Tool Capabilities/Limitations¶

• No liquids or uncured polymer, photoresist, or spin on films.
• Be aware that the profiler stylus will make contact with your sample and may scratch into softer materials. Stylus force is software selectable in a range of 1 to 15mg. Lower values of stylus force should be used for soft materials to help reduce scratching into the film.
  

• Vertical Range: ~500Å - 2620kÅ
  • Note: Step height measurement accuracy for small steps becomes limited by noise floor of the instrument and/or sample surface roughness. Based on step height repeatability measurements on a calibration check sample with 400um scan distance and 200um feature width, approximately +/-10% accuracy is expected for a 500Å step
• Vertical Resolution (@ various ranges):
  • 1Å @65kÅ
  • 10Å @655kÅ
  • 2620Å @2620kÅ
• Stylus: Diamond tip, 12.5μm radius
  • Note: Tip size limits the capability of measuring narrow and high aspect ratio trenches. Measurement should be attempted using the Zygo 3D optical profiler in these cases.
• Stylus Tracking Force: 1mg – 15mg (software selectable)
• Scan length: 50μm to 30,000μm (30 mm)
• Scan duration: 3 to 100 seconds for 900 to 30,000 data points/scan
• Horizontal resolution = (Scan length) ÷ (Scan duration x 300 samples/sec)
  

Substrate Requirements¶

• Sample Stage Size: 6” for 150mm wafers and smaller samples
• Max Sample thickness: 31.75mm
• Max Sample weight: 1.5lbs
  

Supported Processes¶

• N/A
  

Operation¶

Tool Maintenance/Qualification¶

Tool Location¶

EnerJet Evaporator

System Overview¶

Tool Capabilities & Limitations¶

• Cryo-pumped box coater capable of low 10-6 Torr base pressure in 1 hr of pumping
  

• No reactive gasses or heating run on this tool
  

• 5x15cc pocket E-beam gun to allow 5 different materials to be deposited in one run
  

• Large distance from source and curved substrate dome designed for liftoff applications
  

• Dome rotation and curved uniformity plate to allow for better uniformity
  

• Five films available:
  

• Any combination of these films can be run. They are programmed 3 at a time in the thin films controller.
  

Substrate Requirements¶

• 2”, 3”, 4” and 6” wafer holders available as well as clip fixtures for smaller pieces
• Tool holds 9 fixtures.
  

Supported Processes¶

• The 5 metals listed above are supported by the XTC/2 controller - Enerjet Evaporator Standard Processes
  

• All films on the Enerjet Evaporator are set. Only FINAL THK, DEP RATE and PROCESS can be changed by users. All other settings are NOT to be changed unless they are found to be incorrect and not matching the Standard Processes Table. Users are also not permitted to exceed posted maximum thicknesses or deposition rates without staff permission
  

Operation¶

Tool Maintenance/Qualification¶

Tool Location¶

Lab18_02

System Overview¶

• Sample sizes: pieces, up to 6” wafers.
• Cryo pumped chamber – upper 10-7 base in 1 hour
• Chamber capacity: single wafer
• Configured with load lock
• Five 3” Sputtering Guns
• 2 DC and 1 RF power supply
• Sample heating – up to 800°C
• RF and DC bias
• Sputtering gases available: Ar, O2, and N2
• Available Materials: See characterization document for released materials
  

Materials¶

• Target Configuration
• Process Parameters
  

Wafer Requirements¶

Characterization¶

• Film Data
• Characterization Data
• User Characterization Notebook
  

Access and Training¶

User Training¶

• Read the tool SOP
• Pass the User Training Quiz
• Complete user tool training
  • Option 1)Create a Help Desk Ticket to schedule a time
  • Option 2)Receive training from another Lab 18 user
• Complete user tool checkout
  • Create a Help Desk Ticket to schedule a time
    

Super User Training¶

• Read all Super User Training Material
• Pass the Super User Training Quiz
• Complete super user tool training
  • Option 1)Create a Help Desk Ticket to schedule a time
  • Option 2)Receive training from another Lab 18 super user
• Complete super user tool checkout
  • Create a Help Desk Ticket to schedule a time
    

Tool Documents¶

• SOP
• Tool Verification Procedure
• Software Reset Procedure
• Motor Error Reset
  

Chemical Vapor Deposition (CVD)¶

LPCVD¶

• S1 T2 - LTO 100mm only (No Metals)
• S1 T3 - N-Type in Situ Doped Poly-Si 150mm only
• S1 T4 - LTO 150mm only (No Metals)
• S2 T2 - Nitride-HTO 150mm only
• S2 T3 - Nitride-HTO-Oxynitride 100mm only
• S2 T4 - Low Stress Nitride 100mm only
• S3 T3 - Flat Poly-Si 100mm only
• S3 T4 - N-Type in Situ Doped Poly-Si 100mm only
• S4 T2 - PSG 100mm only
• S4 T3 - P-Type in Situ Doped Poly-Si 150mm only
• S4 T4 - TEOS 100mm only
• S6 T2 - Nitride-HTO-OxyNitride
• S6 T3 - CVD Poly-Si
• S6 T4 - LTO (some metals allowed)
  

PECVD¶

• GSI PECVD
  

ALD¶

• Oxford ALD
  

Parylene¶

• PDS 2035
  

Dry Etching¶

Plasma Ashing¶

• March Asher
• YES Plasma Stripper
  

RIE¶

• LAM 9400
• Oxford ICP RIE
• Plasmatherm 790
  

DRIE¶

• STS Glass Etcher
• STS Pegasus 4
• STS Pegasus 6
  

Other¶

• Xactix XeF2
  

Metrology¶

• AutoEL Ellipsometer
• Dektak 6 M Surface Profilometer
• Flexus 2320-S
• Height Gauge
• Miller FPP-5000 4-Point Probe
• NanoMan AFM
• NanoSpec 6100
• Olympus BX-51 Fluorescence Microscope (Wet Chemistry)
• Olympus LEXT Interferometer (Wet Chemistry)
• Dektak 6 M Surface Profilometer (Wet Chemistry)
• SEM In-line
• Woollam M-2000DI Ellipsometer
• Zygo NewView 5000
  

Testing¶

• Alessi probe station
• HP4145 Parametric Analyzer
• Keithley 4200-1
• Keithley 4200-2
  

Packaging¶

• ADT 7100 Dicing Saw
• Scriber
• Wire Bonder
  

Patterning¶

Lithography¶

• ACS 200 cluster tool
• CEE Spinner
• CEE Developer 1
• CEE Developer 2
• EVG620 Bond Aligner
• Headway Spinner
• Heidelberg uPG 501
• GCA AS200 AutoStep
• MA/BA-6 Mask/Bond Aligner
• MA6 Mask Aligner
• Mask Maker
• MJB3-1
• MJB3-2
• Raith-150 E-beam
• Solitec Spinner
• YES Image Reversal Oven
  

Wet Chemistry¶

• Dimatix InkJet
• MJB 45S
• NanoInk DPN 5000
  

Physical Vapor Deposition (PVD)¶

Evaporation¶

• Cooke Evaporator
• EnerJet Evaporator
• SJ-20 Evaporator
• SJ-26 Evaporator
  

Sputtering¶

• Denton Explorer-14
• EnerJet Sputter Coater
• Lab18_01
• Lab18_02
• Tegal ALN Sputter
  

Plating¶

• Gold Plating Station
• Nickel Plating (Wet Chemistry)
• Copper Plating (Wet Chemistry)
• Indium Plating (Wet Chemistry)
• Permalloy Plating (Wet Chemistry)
  

Polishing¶

• CMP IPEC-472
• Lapper
  

Thermal Processing¶

Annealing¶

• JetFirst-100 Forming
• JetFirst-150 RTP
• A1, Sintering
• S1 T1 - Annealing 100mm and 150mm
• S5 T2 - Phosphorous Anneal-Oxidation 100mm only
• S5 T4 - Boron Anneal-Oxidation 100mm only
• S6 T1 - Anneal III- V Material
• Wet Chemistry Convection Oven
  

Diffusion/Doping¶

• S5 T1 - Phosphorous Diffusion 100mm only
• S5 T3 - Boron Diffusion 100mm only
• A2, Boron-dope
  

Oxidation¶

• S3 T1 - Dry Oxidation 100mm and 150mm
• S3 T2 - Wet Oxidation 100mm and 150mm
• S5 T2 - Phosphorous Anneal-Oxidation 100mm only
• S5 T4 - Boron Anneal-Oxidation 100mm only
  

Wafer Bonding¶

• EVG501s Bonder (DELETE THIS ONE ?)
• EVG620 Bond Aligner
• CL200 Megasonic Cleaner
• nP12 nanoPREP
• EVG 510 Bonder
• EVG 520i Bonder
• SUSS SB-6E Bonder
  

Wet Processing¶

Wet Benches/Fume hoods¶

• Cleanroom
  • 1480A
    • Spinner Bench 21
    • Solvent Bench 22
    • Base Bench 23
  • 1480B
    • Acid Bench 12
    • Solvent Bench 14
    • Mask 13
  • 1480C
    • Acid Bench 02
    • Solvent Bench 03
  • 1440C
    • Solvent Bench 1440C
    • Acid Bench 1440C
    • Base Bench 1440C
    • Electroplating Fume Hood 1440C
  • 1440B
    • Acid Bench 1440B
    • Base Bench 1440B
  • 1440A
    • Solvent Bench 1440A
    • Mask Clean Bench 1440A
    • Pre-Furnace Clean Bench 1440A
    • Acid Bench 1440A
    • Base Bench 1440A
• Wet Chemistry
  • Acid Bench
  • Base Bench
  • EDP Bench
  • Solvent Bench
    

Drying¶

• Single Stack Spin Rinse Dryer
• Double Stack Spin Rinse Dryer
  

Sonication¶

• Sonicator 1440C
  

Wet Clean¶

• SSEC Wafer Cleaner Wet Chemistry (Wet Chemistry)
  

S2/T3 - Nitride/HTO/Oxynitride 4" only

Description¶

Tool Capabilities & Limitations¶

Material Requirements¶

• 100 mm wafers only
• Wafers should be put through a Pre-Furnace Clean
  

Capabilities¶

Supported Processes¶

Operation¶

Tool Maintenance & Qualification¶

• The paddle and boat are exchanged for clean copies
• A "cap run" is performed
  • A thick layer of oxide, followed by a layer of nitride and then by oxide again, are deposited
  • This simplifies the process of cleaning the tool the next time maintenance is performed
• Process temperatures are profiled, ensuring that the tool maintains desired temperatures when running a recipe
• Staff may run multiple recipes to verify tool characterization
  This maintenance is critical for furnace to operate correctly. It is thus imperative that users keep an accurate log of the tubes accumulation levels. Users who do not comply with this policy, and show a general disregard towards keeping an accurate log, may be removed from the tool.
  

Tool Location¶

Description¶

Policies¶

• Professional Conduct Policy
• Badges/Name Tag Policies
• Private beaker storage
• New locker and gowning room policies
  

Resources¶

• LNF Scheduler
• LNF Store
• LNF Helpdesk
• LNF and NNIN Logos
  

Email Lists Related to the LNF¶

• LNF-info@umich.edu for general information about LNF usage, capabilities, user support, lab tours etc.
• LNF-access@umich.edu for details about access to the lab.
• LNF-security@umich.edu for issues related to access cards (access cards questions, change of room access, etc).
• LNF-billing@umich.edu for questions or requests related to LNF fees, accounts or charges.
• LNF-feedback@umich.edu for questions related to feedback entries.
• LNF-it@umich.edu for questions about the LNF Online Services.
• LNF-safety@umich.edu for safety questions or concerns at the LNF.
  

User Communication Meetings¶

• February 22nd, 2013
• November 28th, 2012
• August 24th, 2012
• May 23rd, 2012
• March 1st, 2012
• October 27th, 2011
  

Forms¶

• name, affiliation and contact information for escort (LNF user bringing a visitor);
• name, affiliation and contact information for visitor;
• type of access requested (cleanroom, wet chemistry etc);
• date and duration of the visit.
  

Overview¶

Tool Capabilities/Limitations¶

• Metals allowed: aluminum, nickel, tantalum, chrome, iridium, molybdenum, tungsten and titanium
• Material restrictions: No polymers allowed
  

• Harware Details
  • Dual frequency RF – 1000 watts @ 13.56Mhz (RF1), 200 watts @ 420khz (RF2)
  • Substrate heating: 100- 380C
  • Gases/ MFC full range parameters: SiH4= 300 sccm, SiH4= 5 sccm, NH3= 1000 sccm, N2O= 2000 sccm, O2= 1000 sccm, NF3= 500 sccm, He= 500 sccm, N2= 1000 sccm
  • Pressure Regulation: Closed loop via process chamber 10Torr pressure gauge and foreline butterfly valve.
    

• Capabilities
  • Released processes:
  • Aspect Ratio
  • Thickness range
    

Substrate Requirements¶

• Sample size range
  • Diameter
  • Thickness
    

Supported Processes¶

• list supported processes/recipes (make links if applicable)
• if applicable list other applicable processes, and/or describe how to write/edit custom recipes
• describe example processes related to the tool (make links)
  

Operation¶

1. Describe basic operating procedure
   1. Like the "cheat sheet" in the front of the log book
      

Tool Maintenance/Qualification¶

Tool Location¶

S6/T2 - Nitride/HTO/OxyNitride

Description¶

Specifications¶

• 4-inch substrates only, can be upgraded to 6-inch
• 25 substrates
• Process Gases: Silane, Dichlorosilane, O2, N2, NO2, NH3
  

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

S6/T1 - Anneal III- V Material

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
  

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tempress Furnace SOP
  

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

S4/T3 - P-Type in Situ Doped Poly-Si 4" only

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
  

S4/T4 - TEOS 4" only

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tempress Furnace SOP
• Characterization Data
  

S4/T2 - PSG 4" only

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

S3/T4 - N-Type in Situ Doped Poly-Si 4" only

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
  

S3/T3 - Flat Poly-Si 4" only

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

Description¶

Processes¶

• Part of the KOH (for Chem room only) Process is to make an oxide or nitride mask. This tool can be used to make such a mask.
  

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

S4/T4 - TEOS 4" only

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Overview
• SOP
• Characterization Data
  

S2/T2 - Nitride/HTO 6" only

Description¶

Processes¶

• Part of the KOH (for Chem room only) Process is to make an oxide or nitride mask. This tool can be used to make a nitride mask.
  

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

S1/T4 - LTO 6" only (No Metals)

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

S1/T3 - Flat Poly-Si 6" only

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
  

S1/T2 - LTO 4" only (No Metals)

Description¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

Specifications¶

Tool Documents¶

Google Docs¶

• Standard Process Recipes
  

PDF¶

• Tempress Furnace SOP
• Tool Overview
  

A2, Boron-dope

Description¶

Applications¶

• Doping for MOSFETs.
  

Tool Documents¶

• Overview http://ssel-sched.eecs.umich.edu/ToolDocs/doc00071.pdf
• SOP http://ssel-sched.eecs.umich.edu/ToolDocs/doc00007.pdf
  

Process Description¶

Equipment¶

• S1 T2 - LTO 100mm only (No Metals)
• S1 T3 - N-Type in Situ Doped Poly-Si 150mm only
• S1 T4 - LTO 150mm only (No Metals)
• S2 T2 - Nitride-HTO 150mm only
• S2 T3 - Nitride-HTO-Oxynitride 100mm only
• S2 T4 - Low Stress Nitride 100mm only
• S3 T3 - Flat Poly-Si 100mm only
• S3 T4 - N-Type in Situ Doped Poly-Si 100mm only
• S4 T2 - PSG 100mm only
• S4 T3 - P-Type in Situ Doped Poly-Si 150mm only
• S4 T4 - TEOS 100mm only
• S6 T2 - Nitride-HTO-OxyNitride
• S6 T3 - CVD Poly
• S6 T4 - LTO (some metals allowed)
  

Description¶

Stack 1 (Room 1480C)¶

• S1 T1 - Annealing 100mm and 150mm
• S1 T2 - LTO 100mm only (No Metals)
• S1 T3 - N-Type in Situ Doped Poly-Si 150mm only
• S1 T4 - LTO 150mm only (No Metals)
  

Stack 2 (Room 1480C)¶

• S2 T1 - Wafer Storage
• S2 T2 - Nitride-HTO 150mm only
• S2 T3 - Nitride-HTO-Oxynitride 100mm only
• S2 T4 - Low Stress Nitride 100mm only
  

Stack 3 (Room 1480C)¶

• S3 T1 - Dry Oxidation 100mm and 150mm
• S3 T2 - Wet Oxidation 100mm and 150mm
• S3 T3 - Flat Poly-Si 100mm only
• S3 T4 - N-Type in Situ Doped Poly-Si 100mm only
  

Stack 4 (Room 1480C)¶

• S4 T2 - PSG 100mm only
• S4 T3 - P-Type in Situ Doped Poly-Si 150mm only
• S4 T4 - TEOS 100mm only
  

Stack 5 (Room 1480C)¶

• S5 T1 - Phosphorous Diffusion 100mm only
• S5 T2 - Phosphorous Anneal-Oxidation 100mm only
• S5 T3 - Boron Diffusion 100mm only
• S5 T4 - Boron Anneal-Oxidation 100mm only
  

Stack 6 (Room 1440B)¶

• S6 T1 - Level III-V Anneal
• S6 T2 - Nitride-HTO-OxyNitride
• S6 T3 - CVD Poly-Si
• S6 T4 - LTO (some metals allowed)
  

Specifications¶

• 4-inch substrates only, can be upgraded to 6-inch
• 25 substrates
• Process Gas: silane/dichlorosilane/O2/N2/NO2/NH3
  

Tool Documents¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data
  

S6/T2 - Nitride/HTO/OxyNitride

Description¶

Specifications¶

• 4-inch substrates only, can be upgraded to 6-inch
• 25 substrates
• Process Gas: silane/dichlorosilane/O2/N2/NO2/NH3
  

Tool Documents¶

• Tool Overview
• Tempress Furnace SOP
• Characterization Data