Plasmatherm 790

Modified on 12/18/2012 03:15 PM by Owen, Kevin — Categorized as: Equipment, Equipment Plasma Etch

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Description
Tool Capabilities/Limitations
Wafer Requirements
Supported Recipes/Processes
Operation
Tool Maintenance/Qualification
Tool Location

Plasmatherm 790

Description¶

The PlasmaTherm 790 is a dual chamber tool. The left chamber is dedicated to RIE functions. The right chamber is set up for PECVD. This tool is a parallel plate configuration. Plasma is generated by a single power source between a powered electrode plate and a ground plate. For RIE, the powered plate is the platen on which the sample sits and the gas shower-head is grounded. For PECVD, this situation is reversed and power is brought in via the shower-head.

Tool Capabilities/Limitations¶

Materials Etched
- SiO₂, Si₃N₄, silicon, organic materials, InP
Materials Deposited
- Silicon oxides, Silicon nitride, amorphous silicon, silicon carbide (no supported recipe), silicon oxynitride
Material restrictions
- None

Harware Details
Power
- 50 to 400 watts
Gases
- RIE: CH₄, H₂, CF₄, CHF₃, He, Ar, O₂
- PECVD: SiH₄, N₂O, N₂, NH₄, CH₄
Temperature
- RIE: 25C
- PECVD: 50C to 350C

Capabilities
- Aspect Ratio - 3:1 typical, varies with process and material
- Thickness range - etch depths to 2 microns

Wafer Requirements¶

Sample sizes
- Up to 100mm
- Thickness up to 5mm

Supported Recipes/Processes¶

Operation¶

Tool Maintenance/Qualification¶

In order to verify tool operation, a weekly blanket oxide etch is run and the etch rate recorded. This chart shows the etch rate over time.

Tool Location¶

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