Oxford ICP RIE

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Table of Contents [Hide/Show] Description    Tool Capabilities/Limitations    Wafer Requirements Supported Recipes/Processes Operation Tool Maintenance/Qualification Tool Location

Oxford ICP RIE

Description¶

The Oxford PlasmaLab 100 is primarily designed and configured for etching III-V materials on small pieces. It may also be used to etch some metals and organic materials.

Tool Capabilities/Limitations¶

• May be used to etch III-V materials, organic materials, chrome, aluminum
• There are no specific material restrictions
  

• Harware Details
  • Rf power: ICP 600W, Bias 600W
  • Gases: Cl2, BCl3, CH4, H2, O2, Ar
  • Platen Temperature: -100C to 350C
  • Pressure: 2 to 99 mT
    

Wafer Requirements¶

• The tool is configured to handle pieces mounted to a 4" handle wafer
  • Plasma uniformity is poor beyond a 20mm radius from center
  • Chlorine based processes will perform better with an oxide coated handle
    

Supported Recipes/Processes¶

Operation¶

For more detailed operating instructions, read the SOP. http://ssel-sched.eecs.umich.edu/ToolDocs/doc00230.doc

Tool Maintenance/Qualification¶

Tool Location¶

LNF Clean room, 1440D