Plasmatherm 790

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Table of Contents [Hide/Show] Description    Tool Capabilities/Limitations    Wafer Requirements Supported Recipes/Processes Operation Tool Maintenance/Qualification Tool Location

Plasmatherm 790

Description¶

The PlasmaTherm 790 is a dual chamber tool. The left chamber is dedicated to RIE functions. The right chamber is set up for PECVD. This tool is a parallel plate configuration. Plasma is generated by a single power source between a powered electrode plate and a ground plate. For RIE, the powered plate is the platen on which the sample sits and the gas shower-head is grounded. For PECVD, this situation is reversed and power is brought in via the shower-head.

Tool Capabilities/Limitations¶

• Materials Etched
  • SiO₂, Si₃N₄, silicon, organic materials, InP
• Materials Deposited
  • Silicon oxides, Silicon nitride, amorphous silicon, silicon carbide (no supported recipe), silicon oxynitride
• Material restrictions
  • None
    

• Harware Details
• Power
  • 50 to 400 watts
• Gases
  • RIE: CH₄, H₂, CF₄, CHF₃, He, Ar, O₂
  • PECVD: SiH₄, N₂O, N₂, NH₄, CH₄
• Temperature
  • RIE: 25C
  • PECVD: 50C to 350C
    

• Capabilities
  • Aspect Ratio - 3:1 typical, varies with process and material
  • Thickness range - etch depths to 2 microns
    

Wafer Requirements¶

• Sample sizes
  • Up to 100mm
  • Thickness up to 5mm
    

Supported Recipes/Processes¶

Operation¶

Tool Maintenance/Qualification¶

In order to verify tool operation, a weekly blanket oxide etch is run and the etch rate recorded. This chart shows the etch rate over time.

Tool Location¶

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